Optical properties of InP GaInP quantum-dot laser structures
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چکیده
منابع مشابه
Design of a new asymmetric waveguide in InP-Based multi-quantum well laser
Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...
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